US 12,436,854 B2
Memory device and control method for performing row hammer protection
William Wu Shen, Taipei (TW); and Chung Hsun Lee, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Sep. 20, 2023, as Appl. No. 18/470,431.
Prior Publication US 2025/0094298 A1, Mar. 20, 2025
Int. Cl. G06F 11/22 (2006.01)
CPC G06F 11/2231 (2013.01) [G06F 2201/805 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A control method for performing row hammer protection of a memory device, wherein the memory device comprises a plurality of memory rows, wherein the control method comprises:
providing a plurality of access count values to the plurality of memory rows respectively when the plurality of memory rows are accessed;
performing a refresh operation on the plurality of memory rows sequentially and resetting the plurality of access count values sequentially in response to a refresh command;
receiving an interrupt command to interrupt the refresh operation, wherein the refresh operation is interrupted when performing on an interrupt memory row, and determining the interrupt memory row;
after the interrupt is lifted, completing the refresh operation on the interrupt memory row and resetting an access count value of the interrupt memory row to an initial value; and
recharging at least one adjacent memory row next to the interrupt memory row, and rewriting at least one access count value of the at least one adjacent memory row next to the interrupt memory row.