US 12,436,839 B2
Storage device for setting prohibited threshold voltage distribution
Suk Hwan Choi, Icheon-si (KR); and Dong Hun Kwak, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jul. 3, 2023, as Appl. No. 18/346,671.
Claims priority of application No. 10-2022-0133469 (KR), filed on Oct. 17, 2022.
Prior Publication US 2024/0126642 A1, Apr. 18, 2024
Int. Cl. G06F 11/00 (2006.01); G06F 11/10 (2006.01)
CPC G06F 11/1004 (2013.01) 17 Claims
OG exemplary drawing
 
1. A storage device comprising:
a memory device including a memory region including memory cells; and
a controller configured to set at least one prohibited threshold voltage distribution among a plurality of threshold voltage distributions formed by the memory cells when a predetermined condition is satisfied and configured to control a program operation of the memory device so that the memory cells do not form the prohibited threshold voltage distribution,
wherein the predetermined condition includes a number of fail bits in data read from the memory region exceeding a reference number.