US 12,436,689 B1
Memory device and detection method for defeated status of memory cell
Wei-Han Chen, Tainan (TW); and Yih-Shan Yang, Hsinchu (TW)
Assigned to MACRONIX International Co., Ltd., Hsinchu (TW)
Filed by MACRONIX International Co., Ltd., Hsinchu (TW)
Filed on Jul. 2, 2024, as Appl. No. 18/761,320.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0653 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A detection method for a defeated status of a memory cell, the detection method comprising:
searching a plurality of status data stored in a page buffer, finding a plurality of set status memory cells in a set status among a plurality of memory cells, and acquiring a plurality of set status data respectively corresponding to the set status memory cells;
storing the set status data in a storage device;
executing a programming operation of a plurality of levels, and setting one of a plurality of latches in the page buffer as a selected latch after a first half of the levels of the programming operation have been completed;
causing the storage device to store each of the set status data in the selected latch; and
checking each of the set status memory cells according to the each of the set status data to determine whether the each of the set status memory cells is maintained in the set status.