US 12,436,572 B2
Foldable display device
Eunae Cho, Paju-si (KR); and Seungkyu Lee, Bucheon-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Nov. 8, 2023, as Appl. No. 18/504,738.
Application 18/504,738 is a continuation of application No. 18/497,359, filed on Oct. 30, 2023.
Application 18/497,359 is a continuation of application No. 17/890,584, filed on Aug. 18, 2022, granted, now 11,893,912.
Application 17/890,584 is a continuation of application No. 17/109,983, filed on Dec. 2, 2020, granted, now 11,455,915, issued on Sep. 27, 2022.
Claims priority of application No. 10-2019-0163880 (KR), filed on Dec. 10, 2019.
Prior Publication US 2024/0071264 A1, Feb. 29, 2024
Int. Cl. G06F 1/16 (2006.01); G09F 9/30 (2006.01); H10K 59/10 (2023.01); H10K 59/40 (2023.01)
CPC G06F 1/1652 (2013.01) [G06F 1/1616 (2013.01); G06F 1/1656 (2013.01); G09F 9/301 (2013.01); H10K 59/10 (2023.02); H10K 59/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A foldable display device, comprising:
a display panel including a folding area and non-folding area adjacent to the folding area, the display panel including a flexible substrate;
a back plate on the display panel;
a first support layer on the back plate;
a second support layer between the back plate and the first support layer;
a plurality of openings in the first support layer and each opening of the plurality is spaced apart from each other; and
an impact absorbing layer corresponding to the folding area,
wherein each opening extends through the first support layer,
wherein the second support layer overlaps the plurality of openings,
wherein the second support layer includes a polymer, and
wherein the display panel includes:
thin film transistor;
a first planarization layer on the thin film transistor;
a second planarization layer sequentially stacked on the first planarization layer;
a light emitting element on the second planarization layer, the light emitting element including an anode, a light emitting unit, and a cathode; and
an intermediate electrode on the first planarization layer, the intermediate electrode coupled to the anode and the thin film transistor.