US 12,436,469 B2
Measuring method for measuring overlay shift and non-transient computer readable storage medium
Chun Yen Wei, Taipei (TW); and Tsu-Wen Huang, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 22, 2023, as Appl. No. 18/187,679.
Prior Publication US 2024/0319616 A1, Sep. 26, 2024
Int. Cl. G03F 7/00 (2006.01); G03F 7/06 (2006.01); G03F 7/20 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 23/58 (2006.01); H01L 29/10 (2006.01)
CPC G03F 7/70633 (2013.01) [G03F 7/706837 (2023.05)] 20 Claims
OG exemplary drawing
 
1. A measuring method for measuring an overlay shift between two wafers, comprising:
providing a previous wafer layer, a to-be-measured wafer layer and a measuring circuit layer, wherein each of the previous wafer layer and the to-be-measured wafer layer comprises a first group of dies;
measuring, by a plurality of probes of the measuring circuit layer, the first group of dies of the to-be-measured wafer layer;
generating a measurement result according to at least the measuring to the first group of dies; and
comparing the measurement result with a standard data to determine the overlay shift between the previous wafer layer and the to-be-measured wafer layer,
wherein the to-be-measured wafer layer is between the previous wafer layer and the measuring circuit layer and is connected to the previous wafer layer and the measuring circuit layer,
wherein at least a part of the first group of dies of the previous wafer layer is electrically connected to a part of the first group of dies of the to-be-measured wafer layer.