| CPC G03F 7/2047 (2013.01) [G03F 7/091 (2013.01); G03F 7/70466 (2013.01); H01L 21/0274 (2013.01); H01L 21/3086 (2013.01)] | 13 Claims |
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1. A method of processing a substrate, comprising:
forming a photosensitive layer on the substrate;
performing a first exposure process to expose the photosensitive layer to actinic radiation through a first mask, wherein the first mask has a plurality of first opaque portions;
performing a first developing process to remove portions of the photosensitive layer exposed to the actinic radiation and form an intermediate pattern;
performing a second exposure process to expose the intermediate pattern to the actinic radiation through a second mask, wherein the second mask has a plurality of second opaque portions;
performing a second developing process to remove portions of the intermediate pattern shielded from the actinic radiation and form a target pattern; and
performing an etching process to remove portions of the substrate exposed through the target pattern;
wherein during the second exposure process, an alignment of the second mask is set at a position that centers of the plurality of second opaque portions of the second mask are aligned with centers of the plurality of first opaque portions.
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10. A method of processing a substrate, comprising:
forming the sacrificial layer on the substrate;
forming a photosensitive layer on the sacrificial layer;
performing a first lithographing process to remove portions of the photosensitive layer exposed to actinic radiation and form an intermediate pattern on the sacrificial layer;
performing a second lithographing process to remove portions of the intermediate pattern shielded from the actinic radiation and form a target pattern on the sacrificial layer; and
etching through the target pattern to remove portions of the substrate and to remove portions of the sacrificial layer in order to form openings in the sacrificial layer.
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