US 12,436,458 B2
Photoresist composition and method of forming photoresist pattern
An-Ren Zi, Hsinchu (TW); Chin-Hsiang Lin, Hsinchu (TW); and Ching-Yu Chang, Yuansun Village (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 21, 2021, as Appl. No. 17/326,977.
Application 17/326,977 is a division of application No. 16/163,425, filed on Oct. 17, 2018, granted, now 11,016,386.
Claims priority of provisional application 62/685,721, filed on Jun. 15, 2018.
Prior Publication US 2021/0278762 A1, Sep. 9, 2021
Int. Cl. G03F 7/004 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/38 (2006.01); G03F 7/42 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/0044 (2013.01) [G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/11 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/30 (2013.01); G03F 7/38 (2013.01); G03F 7/42 (2013.01); H01L 21/0274 (2013.01); G03F 7/2004 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photoresist composition, comprising:
a photoresist material; and
a polymer having pendant fluorocarbon groups and pendant acid leaving groups,
wherein the polymer having the pendant fluorocarbon groups and the pendant acid leaving groups comprises from 0.1 wt. % to 10 wt. % of one or more polar functional groups selected from the group consisting of —NH3 and —NH2 based on a total weight of the polymer having the pendant fluorocarbon and the pendant acid leaving groups, and
the pendant fluorocarbon groups are attached to a polymer main chain via a linking unit including at least one selected from the group consisting of —P—; —P(O2)—; —C(═O)S—; —SO2S—; and —SO—.