| CPC G02F 1/2257 (2013.01) [G02B 6/12002 (2013.01); G02F 1/2255 (2013.01); G02B 2006/12142 (2013.01)] | 18 Claims |

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1. A silicon photonics-based optical modulation device having two metal layers, the optical modulation device comprising:
a phase shifter comprising a first signal electrode, a second signal electrode, and at least two ground electrodes formed in a first metal layer, the phase shifter having two silicon optical waveguides;
a ground unit formed in a second metal layer that is different from the first metal layer, monolithically formed with the first metal layer, and electrically connected to the first metal layer by at least one conductive via; and
a pad unit formed in the second metal layer, provided with a first local area electrically connected to the ground unit, and electrically connected to the first signal electrode and the second signal electrode via a second local area thereof electrically isolated from the ground unit,
wherein the pad unit comprises:
a ground pad formed in the first local area and electrically connected to the ground unit;
a first signal pad disposed in a first region of the second metal layer electrically isolated from the ground portion;
a second signal pad disposed in a second region of the second metal layer electrically isolated from the ground unit;
a first signal transition member electrically connected to the first signal pad, formed in the first metal layer, and connected to the first signal electrode; and
a second signal transition portion electrically connected to the second signal pad, formed in the first metal layer, and connected to the second signal electrode.
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