| CPC G02F 1/025 (2013.01) [G02B 2006/12142 (2013.01); G02F 2201/063 (2013.01); G02F 2203/15 (2013.01)] | 22 Claims |

|
1. A silicon photonics modulator comprising:
a substrate;
a PN junction disposed on the substrate, the PN junction formed by a first L-shaped region doped with a p-type doping abutting a second L-shaped region doped with an n-type doping;
a first plurality of regions doped with the p-type doping arranged adjacent to the first L-shaped region on the substrate, the first plurality of regions each having different doping concentrations which are greater than a doping concentration of the first L-shaped region;
a second plurality of regions doped with the n-type doping arranged adjacent to the second L-shaped region on the substrate, the second plurality of regions each having different doping concentrations which are greater than a doping concentration of the second L-shaped region;
a first electrical contact disposed on one of the first plurality of regions having the highest p-type doping;
a second electrical contact disposed on one of the second plurality of regions having the highest n-type doping; and
multiple grating pillars disposed on at least one of the first plurality of regions or the second plurality of regions, each of the multiple grating pillars doped with the n-type doping or the p-type doping, and each of the multiple grating pillars spaced apart from the first and second L-shaped regions and spaced apart from one another, wherein the multiple grating pillars are configured to decrease electrical resistance between the first electrical contact and the second electrical contact.
|