| CPC G02B 5/208 (2013.01) [G02B 5/207 (2013.01); G02B 5/285 (2013.01)] | 19 Claims |
|
1. An optical filter structure of arbitrary combination of ultraviolet (UV), red (R), green (G), blue (B), and infrared (IR), comprising:
a substrate, which is one of a wafer semiconductor sensor device and a product of a light-transmitting device; and
a filter layer, which is formed on a surface of the substrate and is formed of a plurality of basic units arranged in an array, wherein each of the basic units comprises a plurality of pixel filter films formed through vacuum coating, and the plurality of pixel filter films comprise an arbitrary combination of a ultraviolet (UV) pixel filter film, a red (R) pixel filter film, a green (G) pixel filter film, a blue (B) pixel filter film, and an infrared (IR) pixel filter film, such that the plurality of pixel filter films allow light of corresponding wavelengths to pass therethrough;
wherein:
the UV pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, wherein each of the layers has a unique arrangement of thickness to form a passband in a wavelength range of 300 nm to 1100 nm, the passband having a central wavelength of 300 nm to 400 nm, and remaining being cut off, the passband central wavelength having transmittance greater than 50% at an incident angle of 0°, a cut-off band having transmittance averagely lower than 1%;
the R pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, wherein each of the layers has a unique arrangement of thickness to form a passband in a wavelength range of 300 nm to 1100 nm, the passband having a central wavelength of 580 nm to 740 nm, and remaining being cut off, the passband central wavelength having transmittance greater than 55% at an incident angle of 0°, the cut-off band having transmittance lower than 1%;
the G pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, wherein each of the layers has a unique arrangement of thickness to form a passband in a wavelength range of 300 nm to 1100 nm, the passband having a central wavelength of 500 nm to 565 nm, and remaining being cut off, the passband central wavelength having transmittance greater than 55% at an incident angle of 0°, the cut-off band having transmittance lower than 1%;
the B pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, wherein each of the layers has a unique arrangement of thickness to form a passband in a wavelength range of 300 nm to 1100 nm, the passband having a central wavelength of 400 nm to 500 nm, and remaining being cut off, the passband central wavelength having transmittance greater than 55% at an incident angle of 0°, the cut-off band having transmittance lower than 1%; and
the IR pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, so as to form a passband in a wavelength range of 300 nm to 1100 nm, the central wavelength in a wavelength range of infrared 800 nm to 1100 nm only having a portion or partly overlapped to form a passband, remaining being a cut-off band having transmittance lower than 1%, transmittance of the passband central wavelength being greater than 30% at an incident angle of 0°.
|