US 12,436,289 B2
Time-of-flight image sensor with quantum dot photodetectors
Adrian Mikolajczak, Los Altos, CA (US); and Muzammil Arain, Milpitas, CA (US)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jun. 9, 2022, as Appl. No. 17/836,451.
Prior Publication US 2023/0408699 A1, Dec. 21, 2023
Int. Cl. G01S 17/894 (2020.01); H04N 25/20 (2023.01); H10F 39/18 (2025.01)
CPC G01S 17/894 (2020.01) [H04N 25/20 (2023.01); H10F 39/184 (2025.01)] 24 Claims
OG exemplary drawing
 
1. A time-of-flight sensor, comprising:
a photodetector array comprising a plurality of photodetectors, wherein each photodetector of the photodetector array includes a silicon-based, light-sensitive diode comprising:
a photosensitive layer comprising a plurality of quantum dot particles sensitive to a near infrared (NIR) region of an electromagnetic spectrum, wherein the plurality of quantum dot particles are configured to convert optical energy into electrical energy to generate an electrical current in response to receiving NIR light having a wavelength in the NIR region; and
a processing circuit configured to receive the electrical current and calculate a time-of-flight of the received NIR light based on the electrical current,
wherein the photosensitive layer is a quantum dot layer formed exclusively of the plurality of quantum dot particles,
wherein the silicon-based, light-sensitive diode comprises a first ohmic contact and a second ohmic contact, and the silicon-based, light-sensitive diode comprises a passivation layer interposed between the first ohmic contact and the quantum dot layer or between the second ohmic contact and the quantum dot layer,
wherein the first ohmic contact is a semiconductor region having a first doping type,
wherein the second ohmic contact is a semiconductor region having a second doping type opposite to the first doping type, and
wherein the photosensitive layer is interposed between the first ohmic contact and the second ohmic contact.