US 12,436,122 B2
Apparatus and method for measuring a layer of a semiconductor device using x-ray diffraction
Seungchul Lee, Suwon si (KR); and Younghoon Sohn, Suwon si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 4, 2023, as Appl. No. 18/460,675.
Claims priority of application No. 10-2023-0004984 (KR), filed on Jan. 12, 2023.
Prior Publication US 2024/0241067 A1, Jul. 18, 2024
Int. Cl. H01L 21/66 (2006.01); G01N 23/207 (2018.01); G01N 23/223 (2006.01)
CPC G01N 23/223 (2013.01) [G01N 23/207 (2013.01); H01L 22/12 (2013.01); G01N 2223/6116 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method comprising:
preparing a wafer including an oxide site provided on the wafer for a semiconductor device;
detecting a first intensity of first X-rays diffracted by the oxide site as a first integral area of a graph of the intensity of the X-rays diffracted by the oxide site;
depositing a first metal layer on the wafer including the oxide site;
detecting a second intensity of second X-rays diffracted by the first metal layer deposited on the oxide site as a second integral area of a graph of the intensity of the X-rays diffracted by the first metal layer; and
measuring a thickness of the first metal layer by comparing the first intensity with the second intensity, according to

OG Complex Work Unit Math
wherein I1 is the first intensity, I2 is the second intensity, μ is a coefficient that varies depending on a material forming the metal layer, and t is the thickness of the metal layer.