US 12,436,114 B2
Semiconductor analysis system
Tsunenori Nomaguchi, Tokyo (JP); Yudai Kubo, Tokyo (JP); and Hiroyuki Chiba, Tokyo (JP)
Assigned to Hitachi High-Tech Corporation, Tokyo (JP)
Appl. No. 17/797,304
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Feb. 27, 2020, PCT No. PCT/JP2020/008058
§ 371(c)(1), (2) Date Aug. 3, 2022,
PCT Pub. No. WO2021/171492, PCT Pub. Date Sep. 2, 2021.
Prior Publication US 2023/0055155 A1, Feb. 23, 2023
Int. Cl. H01J 37/26 (2006.01); G01N 1/28 (2006.01); G01N 23/041 (2018.01); G01N 23/20025 (2018.01); H01J 37/34 (2006.01); H01L 21/02 (2006.01); G01N 23/046 (2018.01)
CPC G01N 23/041 (2018.02) [G01N 1/2813 (2013.01); G01N 23/20025 (2013.01); H01J 37/263 (2013.01); H01J 37/347 (2013.01); H01L 21/02002 (2013.01); G01N 23/046 (2013.01); H01J 2237/20292 (2013.01); H01J 2237/2802 (2013.01); H01J 2237/2807 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor analysis system comprising:
a machining device that machines a semiconductor wafer to prepare a thin film sample for observation;
a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample; and
a control device that controls the machining device and the transmission electron microscope device,
wherein the control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, outputs the updated acquisition conditions to the transmission electron microscope device, and
uses the updated acquisition conditions to acquire a transmission electron microscope image of a thin film sample different from the thin film sample;
wherein the control device detects from the transmission electron microscope image a position of a thin film machining area in the thin film sample, compares the detected position of the thin film machining area with a set position of the thin film machining area, and calculates an amount of misalignment of the detected position with respect to the set position, wherein the evaluation result includes the amount of misalignment; and
wherein the control device calculates, from the transmission electron microscope image, an amount of damage of the thin film sample due to machining based on a thickness of a damaged layer of the thin film sample, wherein the evaluation result includes the amount of damage.