US 12,436,050 B2
Pressure sensors and method for forming a MEMS pressure sensor
Markus Eckinger, Regenstauf (DE); Dirk Hammerschmidt, Finkenstein (AT); Florian Brandl, Maxhütte-Haidhof (DE); and Bernhard Winkler, Regensburg (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jan. 27, 2021, as Appl. No. 17/159,492.
Application 17/159,492 is a division of application No. 15/976,111, filed on May 10, 2018, granted, now 10,996,125.
Claims priority of application No. 10 2017 110 663.4 (DE), filed on May 17, 2017; and application No. 10 2017 123 431.4 (DE), filed on Oct. 9, 2017.
Prior Publication US 2021/0148776 A1, May 20, 2021
Int. Cl. G01L 9/00 (2006.01); B81B 3/00 (2006.01); B81C 3/00 (2006.01)
CPC G01L 9/0072 (2013.01) [B81B 3/0021 (2013.01); B81C 3/001 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/04 (2013.01); B81B 2207/012 (2013.01); B81C 2203/032 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A pressure sensor, comprising:
a magnetic sensor element configured to generate a signal based on a magnetic field sensed by the magnetic sensor element;
a microelectromechanical system (MEMS) structure comprising a membrane,
wherein the magnetic sensor element and the MEMS structure are attached to opposite sides of a carrier substrate such that an evacuated cavity is formed between the membrane and the carrier substrate; and
a field influencing element, arranged on a surface of the membrane and comprising two parallel conductive paths over an entire length of the evacuated cavity, configured to:
conduct a current,
generate, based on the current, the magnetic field towards the evacuated cavity,
move, along with the membrane and depending on a pressure applied to the field influencing element, relative to the magnetic sensor element, and
modify the magnetic field based on a movement of the membrane and the field influencing element.