US 12,436,042 B2
Temperature sensor and memory device having same
Chia-Ming Hu, Hsinchu (TW); Chung-Kuang Chen, Hsinchu (TW); Chia-Ching Li, Hsinchu (TW); and Chien-Fu Huang, Kaohsiung (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Jul. 8, 2024, as Appl. No. 18/765,951.
Application 18/765,951 is a division of application No. 17/011,864, filed on Sep. 3, 2020, granted, now 12,061,125.
Claims priority of provisional application 63/010,683, filed on Apr. 16, 2020.
Prior Publication US 2024/0393187 A1, Nov. 28, 2024
Int. Cl. G01K 7/00 (2006.01); G01K 7/42 (2006.01); H10B 43/40 (2023.01); H10B 51/40 (2023.01)
CPC G01K 7/425 (2013.01) [H10B 43/40 (2023.02); H10B 51/40 (2023.02)] 8 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a reference circuit on an integrated circuit chip that generates a first reference with a first non-zero temperature coefficient using a first reference current, and that generates a second reference with a second temperature coefficient having a different magnitude than the first non-zero temperature coefficient using second reference current, the second reference current having a magnitude that is a function of the first reference current; and
a detector circuit on the integrated circuit to convert a difference between a voltage of the first reference and a voltage of the second reference into a digital signal indicating temperature on the integrated circuit.