US 12,436,038 B2
Semiconductor device, temperature detection system, and vehicle
Takahiro Kotani, Kyoto (JP)
Assigned to Rohm Co., Ltd., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Sep. 29, 2023, as Appl. No. 18/478,153.
Application 18/478,153 is a continuation of application No. PCT/JP2022/008816, filed on Mar. 2, 2022.
Claims priority of application No. 2021-062761 (JP), filed on Apr. 1, 2021.
Prior Publication US 2024/0027282 A1, Jan. 25, 2024
Int. Cl. G01K 7/01 (2006.01); H10D 84/40 (2025.01)
CPC G01K 7/01 (2013.01) [H10D 84/401 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a power element;
a drive circuit configured to drive the power element; and
a temperature detection circuit configured to be capable of detecting a temperature of 0° C. or lower,
wherein
the temperature detection circuit is configured to generate and output, based on a voltage signal that is temperature-dependent, a detection signal that has a lower temperature-dependent change rate than the voltage signal, and
the temperature-dependent change rate of the detection signal is an absolute value of an amount of change in the detection signal with respect to an amount of change in temperature, and the temperature-dependent change rate of the voltage signal is an absolute value of an amount of change in the voltage signal with respect to the amount of change in temperature.