US 12,435,439 B2
Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
Takahiro Miyakura, Toyama (JP); Atsushi Moriya, Toyama (JP); Yasuhiro Megawa, Toyama (JP); Yasunobu Koshi, Toyama (JP); and Akito Hirano, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Mar. 22, 2023, as Appl. No. 18/188,177.
Claims priority of application No. 2022-074526 (JP), filed on Apr. 28, 2022; and application No. 2023-041424 (JP), filed on Mar. 15, 2023.
Prior Publication US 2023/0349065 A1, Nov. 2, 2023
Int. Cl. C30B 1/02 (2006.01); H01L 21/02 (2006.01)
CPC C30B 1/026 (2013.01) [C30B 1/023 (2013.01); H01L 21/02524 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
(a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature;
(b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and
(c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.