US 12,435,427 B2
Substrate processing method and storage medium
Shogo Inaba, Koshi (JP); and Masatoshi Kawakita, Koshi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 30, 2023, as Appl. No. 18/239,825.
Application 18/239,825 is a division of application No. 17/464,926, filed on Sep. 2, 2021, granted, now 11,773,492.
Claims priority of application No. 2020-148900 (JP), filed on Sep. 4, 2020.
Prior Publication US 2023/0407482 A1, Dec. 21, 2023
Int. Cl. B05D 1/00 (2006.01); B05C 5/02 (2006.01); C23C 18/16 (2006.01); C23C 18/20 (2006.01)
CPC C23C 18/2033 (2013.01) [B05C 5/0204 (2013.01); B05C 5/0216 (2013.01); C23C 18/1692 (2013.01); C23C 18/2046 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A substrate processing method of forming a coating film on a peripheral edge portion including a first peripheral edge of a front surface of a substrate and a side surface of the substrate, the substrate processing method comprising:
supplying a first chemical liquid onto the peripheral edge portion of the substrate including a rear surface of the substrate;
removing, among the first chemical liquid supplied onto the substrate, a portion of the first chemical liquid adhering to the front surface and the side surface of the substrate by supplying a first solvent onto the first peripheral edge, after the supplying a first chemical liquid;
supplying a second chemical liquid for forming the coating film on the front surface and the side surface of the substrate, after the removing a portion of the first chemical liquid; and
removing the first chemical liquid remaining on the substrate to which the second chemical liquid adheres by supplying a second solvent onto a second peripheral edge of the rear surface of the substrate, after the supplying a second chemical liquid.