US 12,435,424 B2
Raw material supply system, substrate processing apparatus, and method of manufacturing semiconductor device
Kaoru Yamamoto, Toyama (JP); and Kentaro Goshima, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Mar. 2, 2023, as Appl. No. 18/177,615.
Claims priority of application No. 2022-033249 (JP), filed on Mar. 4, 2022; and application No. 2023-027912 (JP), filed on Feb. 27, 2023.
Prior Publication US 2023/0279551 A1, Sep. 7, 2023
Int. Cl. C23C 16/448 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/52 (2013.01) [C23C 16/448 (2013.01); C23C 16/45561 (2013.01); C23C 16/4584 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A raw material supply system capable of supplying a plurality of raw materials into a process chamber, comprising:
a first gas supply line configured to be capable of controlling a flow rate of a first precursor gas, which is generated by a first raw material, by a flow rate controller, and supplying the first precursor gas into the process chamber; and
a second gas supply line configured to be capable of supplying a second precursor gas, which is generated by a second raw material, into the process chamber,
wherein a flow rate of the second precursor gas is determined based on a pressure difference between a primary-side pressure of the flow rate controller installed at the first gas supply line and a supply pressure of the second precursor gas from the second gas supply line into the process chamber.