US 12,435,423 B2
Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Hiroki Hatta, Toyama (JP); Yuji Takebayashi, Toyama (JP); Yusaku Okajima, Toyama (JP); and Shota Tanaka, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Aug. 2, 2022, as Appl. No. 17/879,048.
Claims priority of application No. 2021-153180 (JP), filed on Sep. 21, 2021.
Prior Publication US 2023/0091850 A1, Mar. 23, 2023
Int. Cl. C23C 16/52 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/52 (2013.01) [C23C 16/45546 (2013.01); C23C 16/45553 (2013.01); H01L 21/02126 (2013.01); H01L 21/0228 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
(a1) supplying a first process gas such that a transfer velocity of the first process gas toward an edge region of a substrate is faster than the transfer velocity of the first process gas toward a central region of the substrate;
(a2) supplying a second process gas such that a transfer velocity of the second process gas toward the central region of the substrate is faster than the transfer velocity of the second process gas toward the edge region of the substrate; and
(b) supplying a reactive gas toward the substrate.