| CPC C23C 16/50 (2013.01) [C23C 16/45559 (2013.01); C23C 16/52 (2013.01); H01J 37/32 (2013.01); H01J 37/32229 (2013.01)] | 16 Claims |
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1. An apparatus for forming a thin film, the apparatus comprising:
a chamber provided in a hollow shape having a width, a thickness, and a height, and configured to define a substrate processing space therein;
a substrate support part connected to the chamber to support a substrate inside the chamber;
a heat source part connected to the chamber to face the substrate support part;
at least two injection ports passing through a sidewall of the chamber in one direction of the width and thickness directions of the chamber;
an exhaust port passing through the sidewall of the chamber at a side facing the at least two injection ports of the one direction; and
a plasma generation part connected to the chamber to supply radicals between the substrate support part and the heat source part through the at least two injection ports;
wherein one injection port of the two injection ports is disposed in the one direction toward the center of the substrate to supply the radicals through a first path comprising a central portion of the substrate, and the other injection port is disposed in the one direction toward the edge of the substrate to supply the radicals through a second path comprising the edge of the substrate,
wherein the exhaust port comprises first exhaust ports having a spaced distance greater than a diameter of the substrate support part in the other direction of the width and thickness directions of the chamber.
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12. A method for forming a thin film, the method comprising:
loading a substrate into a chamber and seating the substrate on a substrate support part;
heating the substrate;
generating radicals;
supplying the radicals to one side of the substrate in a direction parallel to the substrate through at least two paths;
allowing the radicals to be in contact with the substrate so as to form a thin film; and
exhausting residual radicals to the other side of the substrate,
wherein the chamber is provided in a hollow shape having a width, a thickness, and a height,
wherein the supplying of the radicals comprises:
supplying the radicals through a first path from one injection port, which is provided toward the center of the substrate, of at least two injection ports passing through a sidewall of the chamber in a width or thickness direction of the chamber, wherein the first path comprises a central portion of the substrate from one side to the other side of the chamber; and
supplying the radicals through a second path from the other injection port provided toward an edge of the substrate, wherein the second path comprises the edge of the substrate,
wherein the exhausting of the residual radicals comprises exhausting the residual radicals through first exhaust ports of an exhaust port passing through the chamber at a side facing the at least two injection ports, wherein the first exhaust ports have a spaced distance greater than a diameter of the substrate support part.
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