US 12,435,420 B2
Reaction chamber for an epitaxial reactor of semiconductor material with non-uniform longitudinal section and reactor
Silvio Preti, Baranzate (IT); Francesco Corea, Baranzate (IT); and Maurilio Meschia, Baranzate (IT)
Assigned to LPE S.P.A., Baranzate (IT)
Appl. No. 17/414,763
Filed by LPE S.P.A., Baranzate (IT)
PCT Filed Oct. 17, 2019, PCT No. PCT/IB2019/058873
§ 371(c)(1), (2) Date Jun. 16, 2021,
PCT Pub. No. WO2020/128653, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 102018000011158 (IT), filed on Dec. 17, 2018.
Prior Publication US 2022/0074048 A1, Mar. 10, 2022
Int. Cl. C23C 16/458 (2006.01); C23C 16/46 (2006.01)
CPC C23C 16/4586 (2013.01) [C23C 16/46 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A reaction chamber for an epitaxial reactor adapted to deposition of semiconductor material on a substrate comprising:
a reactor wall which extends in a longitudinal direction;
a reaction and deposition zone extending in said longitudinal direction, wherein said reaction and deposition zone is defined by susceptor elements configured to be heated by electromagnetic induction,
wherein a first susceptor element of said susceptor elements is opposite to a substrate support element and has a hole extending in said longitudinal direction along its whole length,
wherein said first susceptor element has a non-uniform transverse cross-section which depends on its longitudinal position;
further comprising a volume defined at least partially by the first susceptor element and at least partially by the reactor wall;
wherein said first susceptor element comprises a flat plate and a curved plate which is joined to said flat plate, wherein said flat plate and said curved plate surround said hole; and
wherein said curved plate has at least one cut or at least one hole, and wherein said cut or hole at least partially defines the volume.