US 12,435,419 B2
Nitride-based wafer chemical vapor deposition device and deposition method of the same
Tinglin You, Suzhou (CN); Pi He, Suzhou (CN); and Wen-Yuan Hsieh, Suzhou (CN)
Assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou (CN)
Appl. No. 17/921,364
Filed by INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou (CN)
PCT Filed Sep. 7, 2022, PCT No. PCT/CN2022/117623
§ 371(c)(1), (2) Date Oct. 26, 2022,
PCT Pub. No. WO2024/050727, PCT Pub. Date Mar. 14, 2024.
Prior Publication US 2024/0384415 A1, Nov. 21, 2024
Int. Cl. C23C 16/458 (2006.01); C23C 16/14 (2006.01); C23C 16/34 (2006.01); H01L 21/285 (2006.01); H10D 30/47 (2025.01)
CPC C23C 16/4585 (2013.01) [C23C 16/14 (2013.01); C23C 16/34 (2013.01); H01L 21/28575 (2013.01); H10D 30/475 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A nitride-based wafer chemical vapor deposition (CVD) device comprising:
a heat carrier comprising a carrier surface;
a nitride-based wafer disposed on the carrier surface; and
a clamping ring disposed above the carrier surface and the nitride-based wafer;
wherein the clamping ring comprises:
a tilted surface; and
a polished surface being opposite to the tilted surface,
wherein the nitride-based wafer has a plurality of high electron mobility transistor (HEMT) devices;
wherein the polished surface and the carrier surface are parallel;
wherein a distance between the polished surface and the carrier surface in a first direction is in a range from 1.1 mm to 1.2 mm, and the first direction is parallel to a normal of the carrier surface.