US 12,435,417 B2
Methods and systems for forming a layer comprising vanadium and oxygen
Giuseppe Alessio Verni, Jodoigne (BE); Ren-Jie Chang, Leuven (BE); Qi Xie, Wilsele (BE); and Charles Dezelah, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Feb. 25, 2022, as Appl. No. 17/680,903.
Claims priority of provisional application 63/155,382, filed on Mar. 2, 2021.
Prior Publication US 2022/0282374 A1, Sep. 8, 2022
Int. Cl. C23C 16/455 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/45527 (2013.01); C23C 16/45565 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for filling a gap by a thermal process, the method comprising:
introducing a substrate provided with a gap into a reactor chamber, the gap comprising a gap surface comprising a proximal part and a distal part, the distal part comprising a distal surface within the gap, the proximal part comprising a proximal surface within the gap, the distal surface and the proximal surface comprising the same material;
executing a plurality of deposition cycles, a deposition cycle comprising a precursor pulse and a reactant pulse, wherein:
the precursor pulse comprises introducing a gaseous vanadium precursor into the reactor chamber; and,
the reactant pulse comprises introducing a gaseous oxygen reactant into the reactor chamber;
thereby spatially selectively depositing a vanadium oxide containing material on the distal surface relative to the proximal surface, wherein the step coverage of the vanadium oxide containing material is greater than 150%,
wherein the vanadium precursor chemisorbs onto the gap surface during the precursor pulse of a first deposition cycle, and
wherein a temperature within the reaction chamber during the step of executing a plurality of deposition cycles is at least 400° C.