US 12,435,416 B2
Compositions and methods using same for non-conformal deposition of silicon containing films
Meiliang Wang, Shanghai (CN); Tingmin Wang, Tempe, AZ (US); and Xinjian Lei, Vista, CA (US)
Assigned to Versum Materials US, LLC, Tempe, AZ (US)
Appl. No. 17/641,156
Filed by VERSUM MATERIALS US, LLC, Tempe, AZ (US)
PCT Filed Sep. 4, 2020, PCT No. PCT/US2020/049315
§ 371(c)(1), (2) Date Mar. 8, 2022,
PCT Pub. No. WO2021/050368, PCT Pub. Date Mar. 18, 2021.
Claims priority of provisional application 62/898,047, filed on Sep. 10, 2019.
Prior Publication US 2022/0333241 A1, Oct. 20, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01)
CPC C23C 16/45527 (2013.01) [C23C 16/401 (2013.01); C23C 16/4408 (2013.01); C23C 16/45553 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An atomic layer deposition method for depositing a non-conformal film containing silicon and oxygen into surface features comprising vias and/or trenches on a substrate, the method comprising:
a. placing the substrate, having exposed hydroxyl groups on the surface features, into a reactor and heating the reactor to at least one temperature ranging from ambient temperature to about 700° C. and optionally maintaining the reactor at a pressure of 100 torr or less;
b. introducing into the reactor a first precursor with a formula of R1R2R3SiX (I) and including a C═C—N—Si linkage, wherein each of R1, R2, R3 is independently selected from the group consisting of hydrogen, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aryl group, and X is a nitrogen-containing heteroatomic cyclic group, to react with the exposed hydroxyl groups;
c. purging any unreacted first precursor from the reactor using inert gas;
d. introducing an oxygen source into the reactor; and
e. purging any unreacted oxygen source and any by-products with inert gas,
wherein steps b through e are repeated until the surface features are covered with a predetermined amount of the non-conformal film containing silicon and oxygen, with the non-conformal film being thicker on top and upper portions of the surface features relative to film thickness on middle and bottom regions of the surface features.