| CPC C23C 16/45527 (2013.01) [C23C 16/40 (2013.01); H01L 21/02194 (2013.01); H01L 21/02205 (2013.01); H01L 21/0228 (2013.01)] | 22 Claims |

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1. A method of a thermal atomic layer deposition (ALD) process of depositing a gallium aluminum oxide thin film, which is (GaxAl1-x)2O3, 0<x<1, the method comprising:
providing a reactive surface coated with hydroxyls;
conducting one or more ALD growth cycles, wherein each of the one or more ALD growth cycles comprises one or more first ALD sub-cycles and one or more second ALD sub-cycles, wherein:
conducting each of the one or more first ALD sub-cycles comprises:
applying a pulse of a first metal precursor to react with the hydroxyls on the reactive surface to form a first monolayer material, wherein the first metal precursor is a gallium compound comprising one or more ligands of a N,N′-diisopropylacetamidinato-group (-amd), a N,N′-diisopropylformamidinato-group (-famd), a N-butyl group (-nBu), a vinyl group (-vinyl), and a guanidinato ligand; and
applying a pulse of an oxygen source after applying the pulse of the first metal precursor to react with the first monolayer material to re-provide a reactive surface coated with hydroxyls; and
conducting each of the one or more second ALD sub-cycles comprises:
applying a pulse of a second metal precursor to react with the hydroxyls on the reactive surface to form a second monolayer material, wherein the second metal precursor is an organic aluminum precursor; and
applying a pulse of an oxygen source after applying the pulse of the second metal precursor to react with the second monolayer material to re-provide a reactive surface coated with hydroxyls.
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