| CPC C23C 16/4485 (2013.01) [C23C 14/24 (2013.01); C23C 16/52 (2013.01); C23C 14/243 (2013.01)] | 20 Claims |

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1. An apparatus, comprising:
a reactant precursor vapor flux control and delivery system located in a vacuum deposition chamber, the reactant precursor vapor flux control and delivery system comprising
a feedstock buffer reservoir,
an evaporation source reservoir remotely mechanically liquid level coupled to the feedstock buffer reservoir, the evaporation source reservoir having a cavity shape that defines an evaporant pool surface area that increases as a function of a fill level of the evaporation source reservoir, and
a liquid reactant precursor located in both the feedstock buffer reservoir and the evaporation source reservoir, wherein a fill level of the liquid reactant precursor in the feedstock buffer reservoir is substantially equal to the fill level of the evaporation source reservoir.
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