US 12,435,413 B2
Indium compound and method for forming indium-containing film using said indium compounds
Takashi Ono, Yokosuka (JP); and Christian Dussarrat, Tokyo (JP)
Assigned to L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Paris (FR)
Appl. No. 17/436,567
Filed by L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Paris (FR)
PCT Filed Mar. 2, 2020, PCT No. PCT/JP2020/008745
§ 371(c)(1), (2) Date Mar. 29, 2022,
PCT Pub. No. WO2020/179748, PCT Pub. Date Sep. 10, 2020.
Claims priority of application No. 2019-039086 (JP), filed on Mar. 5, 2019.
Prior Publication US 2022/0243319 A1, Aug. 4, 2022
Int. Cl. C23C 16/40 (2006.01); C07F 5/00 (2006.01); C07F 17/00 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/407 (2013.01) [C07F 5/00 (2013.01); C07F 17/00 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01)] 10 Claims
 
1. A method for forming an indium-containing film on at least part of a surface of a substrate, the method comprising:
(a) placing the substrate into a reaction chamber;
(b) introducing a vapor that includes a cyclopentadienyl indium compound represented by the following general formula (1) into the reaction chamber;
(c) purging the reaction chamber with a first purge gas after performing the step (b);
(d) introducing an oxygen-containing gas into the reaction chamber;
(e) purging the reaction chamber with a second purge gas after performing the step (d); and
(f) repeating steps (b)-(e) until a desired thickness of the indium-containing film is obtained,
In(C5R1xH(5-x))  (1)
wherein, in the general formula (1), x is an integer of 1 or more and 5 or less, and each R1 is independently a hydrocarbon group having 5 or more and 8 or less carbon atoms.