US 12,435,244 B2
Polishing composition and method of polishing silicon wafer
Noriaki Sugita, Kyoto (JP)
Assigned to NITTA DUPONT INCORPORATED, Osaka (JP)
Appl. No. 18/258,555
Filed by NITTA DuPont Incorporated, Osaka (JP)
PCT Filed Nov. 17, 2021, PCT No. PCT/JP2021/042157
§ 371(c)(1), (2) Date Jun. 21, 2023,
PCT Pub. No. WO2022/137897, PCT Pub. Date Jun. 30, 2022.
Claims priority of application No. 2020-213457 (JP), filed on Dec. 23, 2020.
Prior Publication US 2024/0052202 A1, Feb. 15, 2024
Int. Cl. C09G 1/02 (2006.01); B24B 37/04 (2012.01); C09K 3/14 (2006.01); H01L 21/306 (2006.01)
CPC C09G 1/02 (2013.01) [B24B 37/044 (2013.01); C09K 3/14 (2013.01); H01L 21/30625 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A polishing composition comprising:
an abrasive;
a basic compound;
a wetting agent; and
a non-ionic surfactant,
wherein a surface tension γud is not higher than 64 mN/m, and
a ratio of a surface tension after dilution with water by a factor of 20, γd, to the surface tension γud, denoted by γd/γud, is not lower than 1.10 and not higher than 1.40,
where the surface tensions γd and γud are measurements at 25° C.