US 12,435,096 B2
Indium precursors for vapor depositions
Kayla Diemoz, Wilmington, DE (US); Bradley McKeown, Wilmington, DE (US); Claudia Fafard, Newark, DE (US); and Venkateswara R. Pallem, Hockessin, DE (US)
Assigned to American Air Liquide, Inc., Fremont, CA (US)
Filed by American Air Liquide, Inc., Fremont, CA (US)
Filed on Jul. 3, 2023, as Appl. No. 18/217,963.
Application 18/217,963 is a division of application No. 17/063,768, filed on Oct. 6, 2020, abandoned.
Prior Publication US 2023/0357281 A1, Nov. 9, 2023
Int. Cl. C07F 5/00 (2006.01); C23C 16/18 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01)
CPC C07F 5/003 (2013.01) [C23C 16/18 (2013.01); C23C 16/407 (2013.01); C23C 16/45553 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for forming an indium(III)-containing film on a substrate, the method comprising the steps of:
exposing the substrate to a vapor of a film forming composition that contains an indium(III)-containing precursor; and
depositing at least part of the indium(III)-containing precursor onto the substrate to form the indium(III)-containing film on the substrate through a vapor deposition process,
wherein the indium(III)-containing precursor is selected from

OG Complex Work Unit Chemistry