	US 12,434,972 B2
	Boron-doped carbon nanotubes synthesized by arc discharge and method of manufacturing the same
Nae Sung Lee, Seoul (KR); and Syed Muhammad Zain Mehdi, Seoul (KR)
Assigned to INDUSTRY-ACADEMIA COOPERATION GROUP OF SEJONG UNIVERSITY, (KR)
Filed by INDUSTRY-ACADEMIA COOPERATION GROUP OF SEJONG UNIVERSITY, Seoul (KR)
Filed on Jun. 22, 2022, as Appl. No. 17/847,150.
Claims priority of application No. 10-2021-0083822 (KR), filed on Jun. 28, 2021; and application No. 10-2022-0067320 (KR), filed on Jun. 2, 2022.
Prior Publication US 2023/0039609 A1, Feb. 9, 2023
Int. Cl. C01B 32/16 (2017.01); B01J 19/08 (2006.01); B82Y 40/00 (2011.01)

CPC C01B 32/16 (2017.08) [B01J 19/088 (2013.01); B01J 2219/0839 (2013.01); B01J 2219/0845 (2013.01); B82Y 40/00 (2013.01); C01B 2202/06 (2013.01); C01B 2202/22 (2013.01); C01B 2202/36 (2013.01); C01P 2002/04 (2013.01); C01P 2002/54 (2013.01); C01P 2002/82 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01); C01P 2006/80 (2013.01)]

12 Claims

1. A multi-walled carbon nanotube (MWCNT) doped with boron and having a reduced outer diameter compared to an undoped carbon nanotube, wherein the outer diameter of the doped MWCNT has a value of 4 nm to 20 nm, wherein the MWCNT has 10.4 or less as average crystallinity evaluation index on a Raman spectrum.