US 12,434,330 B1
Laser-based surface processing for semiconductor workpiece
Devon Michael Diehl, Durham, NC (US); and Joshua Venton Negley, Hillsborough, NC (US)
Assigned to WOLFSPEED, INC., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Apr. 5, 2024, as Appl. No. 18/628,223.
Int. Cl. H01L 25/16 (2023.01); B23K 26/03 (2006.01); B23K 26/08 (2014.01); B23K 26/40 (2014.01); H01L 21/02 (2006.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01)
CPC B23K 26/40 (2013.01) [B23K 26/032 (2013.01); B23K 26/0869 (2013.01); H01L 21/02013 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08)] 21 Claims
OG exemplary drawing
 
1. A method, comprising:
removing a wide bandgap semiconductor wafer from a boule using a removal process;
ablating, with one or more lasers, an exposed surface resulting from the removal process to remove material from the exposed surface such that the exposed surface has a surface roughness in a range of about 0.5 nanometers to about 65 microns, wherein ablating, with one or more lasers, the exposed surface reduces a thickness of semiconductor material by about 25 microns or greater.