US 12,434,315 B2
Reverse soldering connection structure of microneedle and wiring and preparation process therefor
Li Huang, Wuhan (CN); Cheng Huang, Wuhan (CN); Guangyan Cai, Wuhan (CN); Jianfei Gao, Wuhan (CN); Chunshui Wang, Wuhan (CN); and Chao Wang, Wuhan (CN)
Assigned to WUHAN NEURACOM TECHNOLOGY DEVELOPMENT CO., LTD., Wuhan (CN)
Filed by WUHAN NEURACOM TECHNOLOGY DEVELOPMENT CO., LTD., Wuhan (CN)
Filed on Nov. 21, 2024, as Appl. No. 18/955,060.
Application 18/955,060 is a continuation of application No. PCT/CN2022/126569, filed on Oct. 21, 2022.
Claims priority of application No. 202210878799.9 (CN), filed on Jul. 25, 2022.
Prior Publication US 2025/0083243 A1, Mar. 13, 2025
Int. Cl. B23K 1/00 (2006.01); B23K 1/20 (2006.01); B23K 101/36 (2006.01)
CPC B23K 1/0016 (2013.01) [B23K 1/20 (2013.01); B23K 2101/36 (2018.08)] 6 Claims
OG exemplary drawing
 
1. A process for preparing a reverse soldering connection structure of a microneedle and a wiring, comprising following steps:
S1, preparing a reverse soldering metal layer of the microneedle;
S2, preparing a reverse soldering metal layer of the wiring; and
S3, aligning the reverse soldering metal layer of the microneedle with the reverse soldering metal layer of the wiring, and pressing the reverse soldering metal layer of the microneedle and the reverse soldering metal layer of the wiring to form a reverse soldering connection structure;
wherein the preparing the reverse soldering metal layer of the microneedle comprises:
preparing a microneedle insulation layer on the microneedle;
etching the microneedle insulation layer at a designated position to form an etching hole, and electroplating metal in the etching hole; and
releasing the microneedle insulation layer to expose the reverse soldering metal layer of the microneedle,
wherein the reverse soldering connection structure is formed by reversedly soldering an upper metal and a lower metal, or the reverse soldering connection structure is formed by reversedly soldering and connecting metal sidewalls.