US 12,108,683 B2
Magnetic tunnel junction device and operating method therefor
Jin Pyo Hong, Seoul (KR); Jeong Hun Shin, Seoul (KR); and Yoon Seong Choi, Goyang-si (KR)
Assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul (KR)
Appl. No. 17/796,102
Filed by IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul (KR)
PCT Filed Jan. 8, 2021, PCT No. PCT/KR2021/000235
§ 371(c)(1), (2) Date Jul. 28, 2022,
PCT Pub. No. WO2021/153920, PCT Pub. Date Aug. 5, 2021.
Claims priority of application No. 10-2020-0010123 (KR), filed on Jan. 28, 2020.
Prior Publication US 2023/0083328 A1, Mar. 16, 2023
Int. Cl. H10N 50/10 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/01 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H10B 61/00 (2023.02); H10N 50/80 (2023.02); H10N 50/01 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A magnetic tunnel junction device comprising:
a magnetic tunnel junction unit forming a magnetic tunnel junction of a free layer, a tunnel barrier layer, and a pinned layer formed on a lower electrode;
a magnetization induction unit formed on the magnetic tunnel junction unit, having ferromagnetic coupling and antiferromagnetic coupling, and configured to determine a pinned magnetization of the magnetic tunnel junction unit; and
an upper electrode formed on the magnetization induction unit.