US 12,108,677 B2
Thermoelectric composite, preparation method therefor, and thermoelectric device and semiconductor device each comprising thermoelectric composite
Tae Joo Park, Ansan-si (KR); Sang Woon Lee, Suwon-si (KR); Dae Woong Kim, Ansan-si (KR); Tae Jun Seok, Ansan-si (KR); Jae Hyun Yoon, Yongin-si (KR); and Ji Hyeon Choi, Ansan-si (KR)
Assigned to Industry-University Cooperation Foundation Hanyang University Erica Campus, Ansan-si (KR); and Ajou University Industry-Academic Cooperation Foundation, Suwon-si (KR)
Filed by Industry-University Cooperation Foundation Hanyang University Erica Campus, Ansan-si (KR); and Ajou University Industry-Academic Cooperation Foundation, Suwon-si (KR)
Filed on Feb. 2, 2023, as Appl. No. 18/163,694.
Application 18/163,694 is a continuation of application No. PCT/KR2021/012210, filed on Sep. 8, 2021.
Claims priority of application No. 10-2020-0114297 (KR), filed on Sep. 8, 2020; application No. 10-2020-0114298 (KR), filed on Sep. 8, 2020; and application No. 10-2020-0114299 (KR), filed on Sep. 8, 2020.
Prior Publication US 2023/0189650 A1, Jun. 15, 2023
Int. Cl. H10N 10/855 (2023.01); H01L 23/427 (2006.01); H10N 10/01 (2023.01); H10N 10/13 (2023.01); H10N 10/817 (2023.01); H10N 10/82 (2023.01)
CPC H10N 10/855 (2023.02) [H01L 23/427 (2013.01); H10N 10/01 (2023.02); H10N 10/13 (2023.02); H10N 10/817 (2023.02); H10N 10/82 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A preparation method for a thermoelectric composite, the preparation method comprising:
preparing a base substrate containing a first binary metal oxide; and
providing a metal precursor and a reaction material containing oxygen (O) onto the base substrate to form a material film containing a second binary metal oxide resulting from reaction of the metal precursor and the reaction material,
wherein forming the material film includes generating a 2-dimensional electron gas between the base substrate and the material film as the material film is formed on the base substrate; and
wherein a process temperature for forming the material film is controlled, so that a sheet resistance at an interface between the base substrate and the material film is controlled.