| CPC H10K 59/131 (2023.02) [H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); G09G 3/3233 (2013.01); G09G 2300/0809 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/24 (2013.01); H01L 29/7869 (2013.01)] | 15 Claims |
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1. A display apparatus comprising:
a substrate comprising a display area and a peripheral area outside the display area;
a thin film transistor arranged on the substrate corresponding to the display area and comprising a semiconductor layer and a gate electrode;
a pad electrode arranged on the substrate corresponding to the peripheral area and comprising an oxide semiconductor material the same as that of the semiconductor layer; and
a first insulating layer arranged on the thin film transistor and the pad electrode and comprising an opening that partially exposes a top surface of the pad electrode with a bottom of the opening positioned at the partially exposed top surface,
wherein the first insulating layer overlaps both edges of the pad electrode in a direction perpendicular to a top surface of the substrate, is not in direct contact with a side surface of one edge of the both edges of the pad electrode, and is in direct contact with a side surface of an other edge of the both edges of the pad electrode, and
the both edges of the pad electrode are located respectively at two opposite edges of the pad electrode in a horizontal direction parallel to the top surface of the substrate.
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