US 12,108,636 B2
OLED display panel and manufacturing method thereof
Jia Tang, Guangdong (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
Appl. No. 17/056,455
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong (CN)
PCT Filed Oct. 30, 2020, PCT No. PCT/CN2020/125163
§ 371(c)(1), (2) Date Nov. 18, 2020,
PCT Pub. No. WO2022/047973, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 202010907704.2 (CN), filed on Sep. 2, 2020.
Prior Publication US 2022/0310740 A1, Sep. 29, 2022
Int. Cl. H10K 59/131 (2023.01); H01L 23/00 (2006.01); H10K 59/126 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01); H10K 59/122 (2023.01)
CPC H10K 59/131 (2023.02) [H01L 24/05 (2013.01); H10K 59/126 (2023.02); H10K 71/00 (2023.02); H01L 24/03 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/0568 (2013.01); H01L 2924/0132 (2013.01); H10K 59/1201 (2023.02); H10K 59/122 (2023.02)] 19 Claims
OG exemplary drawing
 
1. An OLED display panel, comprising a display area and a bonding area defined at least at one side of the display area;
the OLED display panel further comprising:
a substrate;
a first metal layer disposed on the substrate, wherein the first metal layer comprises a light-shielding metal disposed in the display area and a bonding metal disposed in the bonding area, the bonding metal being light-shielding; and
a thin film transistor device layer disposed on the first metal layer, wherein the thin film transistor device layer comprises a thin film transistor and a spacer layer located above the light-shielding metal, and the spacer layer is formed with an opening in the bonding area to expose a portion of an upper surface of the bonding metal;
wherein a material of the first metal layer comprises an aluminum titanium alloy,
the thin film transistor device layer further comprises a second metal layer located above the first metal layer, and the second metal layer comprises a signal trace disposed in the bonding area, and
the signal trace is connected to the bonding metal through a first via hole penetrating a portion of the spacer layer, and the first via hole is spaced apart from the opening.