US 12,108,614 B2
Photoelectric conversion element and solid-state imaging device
Naoki Uchino, Kanagawa (JP); Yosuke Murakami, Kanagawa (JP); Miki Kimijima, Tokyo (JP); and Toshio Nishi, Kanagawa (JP)
Assigned to SONY GROUP CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Feb. 14, 2022, as Appl. No. 17/671,311.
Application 17/671,311 is a continuation of application No. 16/763,611, granted, now 11,322,547, previously published as PCT/JP2018/042417, filed on Nov. 16, 2018.
Claims priority of application No. 2017-222977 (JP), filed on Nov. 20, 2017.
Prior Publication US 2022/0165800 A1, May 26, 2022
Int. Cl. H01L 27/146 (2006.01); H10K 30/00 (2023.01); H10K 39/32 (2023.01)
CPC H10K 39/32 (2023.02) [H10K 30/451 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A photoelectric conversion element, comprising:
a first electrode;
a second electrode disposed to be opposed to the first electrode; and
an organic photoelectric conversion layer provided between the first electrode and the second electrode, the organic photoelectric conversion layer having a domain of one organic semiconductor material therein,
wherein the domain of the one organic semiconductor material has a smaller domain length in a plane direction of the organic photoelectric conversion layer than a domain length in a film-thickness direction of the organic photoelectric conversion layer, wherein the one organic semiconductor material has a hole transporting property, wherein the organic photoelectric conversion layer has an interference fringe in a cross-sectional photograph in the film-thickness direction, wherein the cross-sectional photograph is taken by a transmission electron microscope under a defocus condition, the interference fringe including two or more lines, and wherein an interval between the two or more lines included in the interference fringe falls within ±50% of a molecular length of the one organic semiconductor material.
 
6. A solid-state imaging device, comprising:
a plurality of pixels, each pixel in the plurality of pixels including one or more organic photoelectric conversion sections,
wherein the organic photoelectric conversion sections each include:
a first electrode;
a second electrode disposed to be opposed to the first electrode; and
an organic photoelectric conversion layer provided between the first electrode and the second electrode, the organic photoelectric conversion layer having a domain of one organic semiconductor material therein,
wherein the domain of the one organic semiconductor material having a smaller domain length in a plane direction of the organic photoelectric conversion layer than a domain length in a film-thickness direction of the organic photoelectric conversion layer, and the one organic semiconductor material has a hole transporting property, wherein the organic photoelectric conversion layer has an interference fringe in a cross-sectional photograph in the film-thickness direction, wherein the cross-sectional photograph is taken by a transmission electron microscope under a defocus condition, the interference fringe including two or more lines, and wherein an interval between the two or more lines included in the interference fringe falls within ±50% of a molecular length of the one organic semiconductor material.