US 12,108,611 B2
Nonvolatile memory device having resistance change layer
Jae Hyun Han, Icheon-si (KR); Se Ho Lee, Yongin-si (KR); and Hyangkeun Yoo, Seongnam-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jul. 28, 2020, as Appl. No. 16/941,170.
Claims priority of application No. 10-2020-0017891 (KR), filed on Feb. 13, 2020.
Prior Publication US 2021/0257409 A1, Aug. 19, 2021
Int. Cl. H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10B 63/30 (2023.02) [H10B 63/82 (2023.02); H10B 63/84 (2023.02); H10N 70/24 (2023.02); H10N 70/245 (2023.02); H10N 70/253 (2023.02); H10N 70/823 (2023.02); H10N 70/841 (2023.02); H10N 70/8822 (2023.02); H10N 70/8828 (2023.02); H10N 70/883 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A nonvolatile memory device comprising:
a substrate;
a resistance change layer disposed on the substrate;
a gate electrode layer disposed on the resistance change layer; and
a first electrode pattern layer and a second electrode pattern layer that are disposed in the substrate and contact different portions of the resistance change layer,
wherein the resistance change layer comprises movable oxygen vacancies or movable metal ions,
wherein the substrate comprises a semiconductor material,
wherein the semiconductor material contacts the resistance change layer,
wherein the resistance change layer has a first resistive material layer disposed on upper surfaces of the first electrode pattern layer, the substrate and the second electrode pattern layer and a second resistive material layer disposed on the first resistive material layer,
wherein a thickness of the first resistive material layer is less than a thickness of the second resistive material layer,
wherein the first resistive material layer has a lower concentration of oxygen vacancies or a lower concentration of movable metal ions compared with the second resistive material layer, and
wherein the nonvolatile memory device further comprises:
first and second trigger filaments formed in the first resistive material layer adjacent to pattern edge portions of the first and second electrode pattern layers, the first and second trigger filaments contacting the first and second electrode pattern layers; and
a connecting filament formed in the second resistive material layer, the connecting filament connecting the first and second trigger filaments,
wherein the first and second trigger filaments are disposed through the first resistive material layer to reach the second resistive material layer to contact the connecting filament,
wherein the first and second trigger filaments are not directly connected with each other, and
wherein diameters of the first and second trigger filaments are greater than a diameter of the connecting filament.