US 12,107,486 B2
Control circuitry for increasing power output in quasi-resonant converters
Akshat Jain, Nahan (IN)
Assigned to STMicroelectronics International N.V., Geneva (CH)
Filed by STMicroelectronics International N.V., Geneva (CH)
Filed on Aug. 15, 2023, as Appl. No. 18/234,137.
Application 18/234,137 is a division of application No. 16/984,756, filed on Aug. 4, 2020, granted, now 11,764,662.
Application 16/984,756 is a continuation of application No. 16/003,331, filed on Jun. 8, 2018, granted, now 10,778,082, issued on Sep. 15, 2020.
Prior Publication US 2023/0387783 A1, Nov. 30, 2023
Int. Cl. H02M 1/08 (2006.01); H02M 1/32 (2007.01); H03K 17/082 (2006.01); H05B 6/10 (2006.01); H02M 7/04 (2006.01)
CPC H02M 1/08 (2013.01) [H02M 1/32 (2013.01); H03K 17/0828 (2013.01); H05B 6/108 (2013.01); H02M 7/04 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method of operating an induction geyser, comprising:
drawing current through a resonant tank using a transistor to generate a changing magnetic field about the resonant tank that, due to positioning of the resonant tank relative to a fluid tank, results in the changing magnetic field encompassing the fluid tank;
monitoring a voltage between first and second conduction terminals of the transistor to determine that the transistor is an overvoltage condition when the voltage between the first and second conduction terminals exceeds a threshold voltage; and
in response to the overvoltage condition, causing a gate driver pull up a gate drive signal driving a control terminal of the transistor.