| CPC H01S 5/0202 (2013.01) [H01S 5/02469 (2013.01); H01S 5/028 (2013.01); H01S 5/4025 (2013.01)] | 8 Claims |
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1. A fabrication method for a semiconductor laser, comprising the following steps:
S11: providing a heat sink motherboard, and cutting the heat sink motherboard to form a plurality of heat sink substrates;
S12: providing an epitaxial wafer, the epitaxial wafer comprising a plurality of resonant cavities arranged in parallel and formed by etching;
S13: bonding the plurality of heat sink substrates to the epitaxial wafer in an array to form a plurality of first gaps parallel to a direction of the plurality of resonant cavities and a plurality of second gaps perpendicular to the direction of the plurality of resonant cavities, and wherein each of the plurality of first gaps is between any two adjacent of the plurality of resonant cavities;
S14: dividing the epitaxial wafer along the plurality of second gaps or along the plurality of second gaps and the plurality of first gaps to obtain a plurality of laser chips, wherein each of the plurality of laser chips comprises at least one laser bar, each of the laser bar has one of the plurality of resonant cavities and is on a corresponding one of the plurality of heat sink substrates; and
S15: stacking the plurality of laser chips and coating the plurality of laser chips in a stacked state to form a plurality of semiconductor lasers, so that each of the plurality of semiconductor lasers comprises one of the plurality of laser chips and a corresponding one or more of the plurality of heat sink substrates.
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