US 12,107,195 B2
Light emitting diode package and method of manufacturing the same
Chi Hyun In, Ansan-si (KR); Jun Yong Park, Ansan-si (KR); Kyu Ho Lee, Ansan-si (KR); Dae Woong Suh, Ansan-si (KR); Jong Hyeon Chae, Ansan-si (KR); Chang Hoon Kim, Ansan-si (KR); and Sung Hyun Lee, Ansan-si (KR)
Assigned to SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed by SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed on Jan. 17, 2023, as Appl. No. 18/098,030.
Application 18/098,030 is a continuation of application No. 16/935,030, filed on Jul. 21, 2020, granted, now 11,563,152.
Application 16/935,030 is a continuation of application No. 16/125,769, filed on Sep. 10, 2018, granted, now 10,727,376, issued on Jul. 28, 2020.
Application 16/125,769 is a continuation of application No. 13/425,156, filed on Mar. 20, 2012, granted, now 10,074,778, issued on Sep. 27, 2012.
Claims priority of provisional application 61/552,618, filed on Oct. 28, 2011.
Claims priority of provisional application 61/505,107, filed on Jul. 6, 2011.
Claims priority of provisional application 61/466,229, filed on Mar. 22, 2011.
Prior Publication US 2023/0155072 A1, May 18, 2023
Int. Cl. H01L 33/48 (2010.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/486 (2013.01) [H01L 33/20 (2013.01); H01L 33/44 (2013.01); H01L 33/505 (2013.01); H01L 33/62 (2013.01); H01L 2224/16 (2013.01); H01L 2933/0033 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A light emitting diode, comprising:
a semiconductor structure comprising a first type semiconductor layer, an active layer, and a second type semiconductor layer;
a first insulating layer disposed on the semiconductor structure and comprising a first opening disposed on the first type semiconductor layer;
a first connection wire disposed on the first insulating layer, the first connection wire comprising a first portion and a second portion; and
a second connection wire disposed on the second type semiconductor layer and spaced apart from the first connection wire in a plan view, the second connection wire electrically connected to the second type semiconductor layer and comprising a first portion and a second portion;
wherein:
the first portion of the first connection wire is extended from the second portion of the first connection wire from a first side toward a second side,
the first portion and the second portion of the second connection wire are extended from the second side toward the first side;
the first portion of the first connection wire is electrically connected to the first type semiconductor layer through the first opening,
the second connection wire at least partially surrounds the first portion of the first connection wiring in a plan view; and
a portion of the first connection wire is disposed between the first portion and the second portion of the second connection wire in a plan view.