	US 12,107,186 B2
	Semiconductor LED and method of manufacturing the same
Junhee Choi, Seongnam-si (KR); Nakhyun Kim, Yongin-si (KR); Jinjoo Park, Yongin-si (KR); and Joohun Han, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 23, 2023, as Appl. No. 18/322,075.
Application 18/322,075 is a continuation of application No. 17/138,071, filed on Dec. 30, 2020, granted, now 11,699,775.
Claims priority of application No. 10-2020-0008760 (KR), filed on Jan. 22, 2020; and application No. 10-2020-0073732 (KR), filed on Jun. 17, 2020.
Prior Publication US 2023/0299235 A1, Sep. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/24 (2010.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01)

CPC H01L 33/24 (2013.01) [H01L 25/0753 (2013.01); H01L 33/32 (2013.01); H01L 33/0075 (2013.01)]

20 Claims

1. A light emitting diode (LED) comprising:

a rod-shaped n-type semiconductor layer; and,

a plurality of LED structures spaced apart from each other on the rod-shaped n-type semiconductor layer, each of the plurality of LED structures comprising a n-type semiconductor element, a multi-quantum well (MQW) active element and a p-type semiconductor element;

wherein the n-type semiconductor element contacts the rod-shaped n-type semiconductor layer,

wherein the n-type semiconductor element and the rod-shaped n-type semiconductor layer are made of the same material, and

wherein a width of each of the plurality of LED structures is greater than or equal to about 10 nm and less than or equal to about 100 nm.