US 12,107,173 B2
Schottky rectifier with surge-current ruggedness
Andrei Konstantinov, Sollentuna (SE)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed on May 23, 2023, as Appl. No. 18/322,249.
Application 18/322,249 is a continuation of application No. 17/450,734, filed on Oct. 13, 2021, granted, now 11,715,804.
Application 17/450,734 is a continuation of application No. 16/512,780, filed on Jul. 16, 2019, granted, now 11,171,248, issued on Nov. 9, 2021.
Claims priority of provisional application 62/804,559, filed on Feb. 12, 2019.
Prior Publication US 2023/0411536 A1, Dec. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/872 (2006.01); H01L 21/04 (2006.01); H01L 21/761 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 21/046 (2013.01); H01L 21/0465 (2013.01); H01L 21/047 (2013.01); H01L 21/761 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0634 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/6606 (2013.01); H01L 29/045 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A Schottky rectifier device, comprising:
a Silicon Carbide (SiC) layer;
a channel region of a first conductivity type formed on the SiC layer;
a metal contact formed on the channel region;
a multi-layer body of a second conductivity type formed within the channel region and extending in a direction of the SiC layer, the multi-layer body including a first layer having a first doping concentration, a second layer adjacent to the first layer and having a second doping concentration less than the first doping concentration, and a third layer adjacent to the second layer and having a third doping concentration less than the second doping concentration, wherein the metal contact extends over an active region of the Schottky rectifier device that includes the channel region and the multi-layer body;
a charge-balanced region that includes the third layer and a portion of the channel region adjacent to the third layer;
a p-n diode rim that surrounds the active region with a continuous body of the second conductivity type and an array of deep rim bodies of the second conductivity type that are parallel to the multi-layer body; and
a junction termination region outside of the p-n diode rim that includes a junction termination (JT) body surrounding the p-n diode rim and connected to a plurality of deep JT bodies extending parallel to the multi-layer body and the deep rim bodies.