US 12,107,172 B2
Semiconductor device
Seungmin Song, Hwaseong-si (KR); Taeyong Kwon, Suwon-si (KR); Jaehyeoung Ma, Seongnam-si (KR); and Namhyun Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 29, 2023, as Appl. No. 18/478,410.
Application 18/478,410 is a continuation of application No. 17/370,464, filed on Jul. 8, 2021, granted, now 11,799,036.
Claims priority of application No. 10-2020-0160177 (KR), filed on Nov. 25, 2020.
Prior Publication US 2024/0030355 A1, Jan. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 21/0259 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first active region on a substrate;
forming a division region extending in a first direction, the division region dividing the first active region into first and second active patterns, wherein the first and second active patterns are spaced apart in a second direction, and the second direction is perpendicular to the first direction; and
forming a first channel pattern on the first active pattern and a second channel pattern on the second active pattern,
wherein an end portion of the first active pattern adjacent to the division region comprises a protruding portion extending in the first direction, and
the protruding portion has a triangle shape, when viewed in a plan view.