US 12,107,141 B2
Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone
Hans-Joachim Schulze, Taufkirchen (DE); Jens Peter Konrath, Villach (AT); Andre Rainer Stegner, Unterhaching (DE); and Helmut Strack, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Mar. 10, 2022, as Appl. No. 17/691,251.
Application 17/691,251 is a continuation of application No. 16/925,523, filed on Jul. 10, 2020, granted, now 11,302,795.
Claims priority of application No. 102019118803.2 (DE), filed on Jul. 11, 2019.
Prior Publication US 2022/0199800 A1, Jun. 23, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66068 (2013.01) [H01L 21/02529 (2013.01); H01L 21/0465 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/7813 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate,
wherein a concentration of Z1/2 defects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate.