US 12,107,132 B2
Source/drain contact positioning under power rail
Ruilong Xie, Niskayuna, NY (US); Indira Seshadri, Niskayuna, NY (US); Eric Miller, Watervliet, NY (US); and Kangguo Cheng, Schenectady, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 30, 2021, as Appl. No. 17/491,408.
Prior Publication US 2023/0095508 A1, Mar. 30, 2023
Int. Cl. H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/41775 (2013.01) [H01L 21/823475 (2013.01); H01L 23/5286 (2013.01); H01L 27/088 (2013.01); H01L 27/0922 (2013.01); H01L 29/401 (2013.01); H01L 29/41725 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor structure for reducing contact to contact shorting, comprising:
a gate cut region comprising:
a liner; and
a dielectric core confined within a first lateral side of the liner and a second lateral side of the liner, wherein the first lateral side contacts the second lateral side below the dielectric core; and
a first source/drain (S/D) contact overlapping the first lateral side and the dielectric core, wherein the first S/D contact comprises a line-end that terminates within and only contacts the second lateral side of the liner.