forming a plurality of transistor cells in a SiC substrate and electrically connected in parallel to form a transistor, wherein forming each transistor cell of the plurality of transistor cells comprises forming a gate structure including a gate electrode, and a gate dielectric stack separating the gate electrode from the SiC substrate and comprising a ferroelectric insulator, wherein the transistor has a specified operating temperature range; and

doping the ferroelectric insulator with a doping material such that the Curie temperature of the ferroelectric insulator is in a range above the specified operating temperature range of the transistor.