US 12,107,095 B2
Solid-state imaging device, method for fabricating solid-state imaging device, and electronic apparatus
Shunsuke Okura, Tokyo (JP); Isao Takayanagi, Tokyo (JP); Kazuya Mori, Tokyo (JP); Ken Miyauchi, Tokyo (JP); and Shigetoshi Sugawa, Miyagi (JP)
Assigned to BRILLNICS SINGAPORE PTE. LTD., Singapore (SG); and TOHOKU TECHNO ARCH CO., LTD., Miyagi (JP)
Filed by BRILLNICS SINGAPORE PTE. LTD., Singapore (SG); and Tohoku Techno Arch Co., Ltd., Miyagi (JP)
Filed on Jul. 17, 2019, as Appl. No. 16/514,298.
Application 16/514,298 is a continuation in part of application No. 16/509,440, filed on Jul. 11, 2019, abandoned.
Claims priority of application No. 2018-134131 (JP), filed on Jul. 17, 2018.
Prior Publication US 2020/0027910 A1, Jan. 23, 2020
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14603 (2013.01) [H01L 27/1464 (2013.01); H01L 27/14656 (2013.01); H01L 27/14689 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A solid-state imaging device comprising:
a substrate having a first substrate surface side and a second substrate surface side opposed to the first substrate surface side;
a photoelectric conversion part including a first conductivity type semiconductor layer pinned between the first substrate surface side and the second substrate surface side of the substrate, the photoelectric conversion part being configured to perform photoelectric conversion of received light and store charges;
a second conductivity type semiconductor layer formed at least on a side portion of the first conductivity type semiconductor layer of the photoelectric conversion part;
a transfer transistor for transferring the charges stored in the photoelectric conversion part;
a floating diffusion to which the charges are transferred through the transfer transistor;
a storage transistor connected to the floating diffusion; and
a storage capacitance element for storing the charges received from the floating diffusion via the storage transistor,
wherein the storage capacitance element is formed on the second substrate surface side so as to spatially overlap with at least a part of the photoelectric conversion part in a direction perpendicular to a substrate surface;
a first region having a first depth from the second substrate surface toward the first substrate surface in the direction perpendicular to the substrate surface; and
a second region having a second depth larger than the first depth,
wherein the photoelectric conversion part is formed such that an area of a portion of a first conductivity type semiconductor layer in the second region opposed to the substrate surface is larger than an area of a portion of a first conductivity type semiconductor layer in the first region opposed to the substrate surface, and
wherein the first conductivity type semiconductor layer in the second region has a shape that is wider at the first conductivity type semiconductor layer in the first region and narrower at the storage capacitance element in a direction parallel to the substrate surface.