US 12,107,090 B2
Semiconductor device, light-emitting device, and electronic device
Hiroyuki Miyake, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Apr. 17, 2023, as Appl. No. 18/135,432.
Application 18/135,432 is a continuation of application No. 17/172,213, filed on Feb. 10, 2021, granted, now 11,637,129.
Application 17/172,213 is a continuation of application No. 16/834,308, filed on Mar. 30, 2020, granted, now 10,950,633, issued on Mar. 16, 2021.
Application 16/834,308 is a continuation of application No. 16/026,115, filed on Jul. 3, 2018, granted, now 10,622,380, issued on Apr. 14, 2020.
Application 16/026,115 is a continuation of application No. 15/341,069, filed on Nov. 2, 2016, granted, now 10,032,798, issued on Jul. 24, 2018.
Application 15/341,069 is a continuation of application No. 14/640,235, filed on Mar. 6, 2015, granted, now 9,508,709, issued on Nov. 29, 2016.
Application 14/640,235 is a continuation of application No. 13/612,073, filed on Sep. 12, 2012, granted, now 8,975,709, issued on Mar. 10, 2015.
Claims priority of application No. 2011-202690 (JP), filed on Sep. 16, 2011.
Prior Publication US 2023/0378188 A1, Nov. 23, 2023
Int. Cl. G09G 3/3233 (2016.01); G09G 3/3275 (2016.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 33/62 (2010.01); H10K 59/10 (2023.01)
CPC H01L 27/1225 (2013.01) [G09G 3/3233 (2013.01); G09G 3/3275 (2013.01); H01L 27/06 (2013.01); H01L 27/0629 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 33/62 (2013.01); G09G 2300/0852 (2013.01); G09G 2300/0861 (2013.01); G09G 2320/045 (2013.01); H10K 59/10 (2023.02)] 3 Claims
OG exemplary drawing
 
2. A light-emitting device comprising a pixel, the pixel comprising:
a first transistor, a second transistor comprising a first gate electrode and a second gate electrode, a third transistor, a fourth transistor, a first capacitor, a second capacitor, and a light-emitting element,
wherein the first gate electrode of the second transistor comprises a region overlapping with the second gate electrode through a channel formation region of the second transistor,
wherein one of a source and a drain of the first transistor is electrically connected to a first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to one electrode of the first capacitor and one of the first gate electrode and the second gate electrode of the second transistor,
wherein one of a source and a drain of the second transistor is electrically connected to the other electrode of the first capacitor, one electrode of the second capacitor, one of a source and a drain of the fourth transistor, and the light-emitting element,
wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,
wherein the other of the source and the drain of the third transistor is directly connected to a second wiring,
wherein the second wiring is a potential supply line which is configured to supply a potential,
wherein the other of the source and the drain of the fourth transistor is electrically connected to a third wiring,
wherein a gate electrode of the first transistor is electrically connected to a first gate signal line, and
wherein a gate electrode of the third transistor is electrically connected to a second gate signal line.